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1

[IEEE 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Vienna, Austria (2020.9.13-2020.9.18)] 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Edge Termination Design with Strong Process Robustness for 1.2 kV-class 4H-SiC Super Junction V-groove MOSFETs

Masuda, Takeyoshi, Hatayama, Tomoaki, Harada, Shinsuke, Saitou, Yu

Year:

2020

File:

PDF, 2.21 MB

2020

2

Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls

Nakao, H., Mikami, Hideno, Yano, Hiroshi, Hatayama, Tomoaki, Uraoka, Yukiharu, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 289 KB

english, 2006

3

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - The optimised design and characterization of 1200 V / 2.0 mΩ cm2 4H-SiC V-groove trench MOSFETs

Uchida, Kosuke, Saitoh, Yu, Hiyoshi, Toru, Masuda, Takeyoshi, Wada, Keiji, Tamaso, Hideto, Hatayama, Tomoaki, Hiratsuka, Kenji, Tsuno, Takashi, Furumai, Masaki, Mikamura, Yasuki

Year:

2015

Language:

english

File:

PDF, 531 KB

english, 2015

4

Thermal degradation of low temperature poly-Si TFT

Takashi Fuyuki, Koji Kitajima, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Shinichiro Hashimoto, Yukihiro Morita

Journal:

Thin Solid Films

Year:

2005

Language:

english

File:

PDF, 300 KB

english, 2005

5

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Fast switching 4H-SiC V-groove trench MOSFETs with buried P+ structure

Wada, Keiji, Masuda, Takeyoshi, Saitoh, Yu, Tamaso, Hideto, Furumai, Masaki, Hiratsuka, Kenji, Mikamura, Yasuki, Hatayama, Tomoaki, Yano, Hiroshi

Year:

2014

Language:

english

File:

PDF, 1.15 MB

english, 2014

6

Extraordinary Characteristics of 4H-SiC Trench MOSFETs on Large Off-Axis Substrates

Ueoka, Yoshihiro, Yano, Hiroshi, Okamoto, Dai, Hatayama, Tomoaki, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 341 KB

english, 2011

7

Reduction of Surface Roughness of 4H-SiC by Catalyst-Referred Etching

Okamoto, Takeshi, Sano, Yasuhisa, Hara, Hideyuki, Hatayama, Tomoaki, Arima, Kenta, Yagi, Keita, Murata, Junji, Sadakuni, Shun, Tachibana, K., Shirasawa, Y., Mimura, Hidekazu, Fuyuki, Takashi, Yamauchi

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 762 KB

english, 2010

8

Degradation in Low-Temperature Poly-Si Thin Film Transistors Depending on Grain Boundaries

Uraoka, Yukiharu, Kitajima, Koji, Kirimura, Hiroshi, Yano, Hiroshi, Hatayama, Tomoaki, Fuyuki, Takashi

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 621 KB

english, 2005

9

Reliability of High-Frequency Operation of Low-Temperature Polysilicon Thin Film Transistors under Dynamic Stress

Uraoka, Yukiharu, Hatayama, Tomoaki, Fuyuki, Takashi, Kawamura, Tetsuya, Tsuchihashi, Yuji

Journal:

Japanese Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 290 KB

english, 2000

10

Gate Length Dependence of Hot Carrier Reliability in Low-Temperature Polycrystalline-Silicon P-Channel Thin Film Transistors

Uraoka, Yukiharu, Morita, Yukihiro, Yano, Hiroshi, Hatayama, Tomoaki, Fuyuki, Takashi

Journal:

Japanese Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 357 KB

english, 2002

11

Evaluation of Crystallinity in 4H-SiC{0001} Epilayers Thermally Etched by Chlorine and Oxygen System

Hatayama, Tomoaki, Yano, Hiroshi, Uraoka, Yukiharu, Fuyuki, Takashi

Journal:

Japanese Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 366 KB

english, 2006

12

Hot Carrier Effect in Low-Temperature poly-Si p-ch Thin-Film Transistors under Dynamic Stress

Uraoka, Yukiharu, Yano, Hiroshi, Hatayama, Tomoaki, Fuyuki, Takashi

Journal:

Japanese Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 164 KB

english, 2002

13

[IEEE 2015 IEEE 4th Global Conference on Consumer Electronics (GCCE) - Osaka, Japan (2015.10.27-2015.10.30)] 2015 IEEE 4th Global Conference on Consumer Electronics (GCCE) - An embedded system of TCP/IP communication by using FPGA

Nakanishi, Atsushi, Hatayama, Kanata, Onoduka, Takuya, Kimura, Tomoaki

Year:

2015

Language:

english

File:

PDF, 361 KB

english, 2015

14

Investigation of Near-Interface Traps Generated by NO Direct Oxidation in C-face 4H-SiC Metal–Oxide–Semiconductor Structures

Okamoto, Dai, Yano, Hiroshi, Oshiro, Yuki, Hatayama, Tomoaki, Uraoka, Yukiharu, Fuyuki, Takashi

Journal:

Applied Physics Express

Year:

2009

Language:

english

File:

PDF, 209 KB

english, 2009

15

Modeling and control of a flexible solar array paddle as a clamped-free-free-free rectangular plate

Fumitoshi Matsuno, Michinori Hatayama, Hideaki Senda, Tomoaki Ishibe, Yoshiyuki Sakawa

Journal:

Year:

1996

Language:

english

File:

PDF, 871 KB

english, 1996

16

Controlled carbonization of Si(001) surface using hydrocarbon radicals in ultrahigh vacuum

Tomoaki Hatayama, Yoichiro Tarui, Tastuo Yoshinobu, Takashi Fuyuki, Hiroyuki Matsunami

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 568 KB

english, 1994

17

Low-temperature heteroepitaxial growth of cubic SiC on Si using hydrocarbon radicals by gas source molecular beam epitaxy

Tomoaki Hatayama, Yoichiro Tarui, Takashi Fuyuki, Hiroyuki Matsunami

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 451 KB

english, 1995

18

Hetero-interface control and atomic layer epitaxy of SiC

Hiroyuki Matsunami, Tomoaki Hatayama, Takashi Fuyuki

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 346 KB

1997

19

Conceptual design of a breeding blanket with super-heated steam cycle for CREST-1

Yoshiyuki Asaoka, Kunihiko Okano, Tomoaki Yoshida, Ken Tomabechi, Yuichi Ogawa, Naoto Sekimura, Yuzo Fukai, Akiyoshi Hatayama, Nobuyuki Inoue, Akira Kohyama, Sei-ichiro Yamazaki, Seiji Mori

Journal:

Fusion Engineering and Design

Year:

2000

Language:

english

File:

PDF, 257 KB

english, 2000

20

Low-temperature interface modification by hydrocarbon radicals in heteroepitaxy of 3C-SiC on Si clean surface

Tomoaki Hatayama, Norihiro Tanaka, Takashi Fuyuki, Hiroyuki Matsunami

Journal:

Journal of Electronic Materials

Year:

1997

Language:

english

File:

PDF, 542 KB

english, 1997

21

[IEEE 2010 35th IEEE Photovoltaic Specialists Conference (PVSC) - Honolulu, HI, USA (2010.06.20-2010.06.25)] 2010 35th IEEE Photovoltaic Specialists Conference - Classification of defects in polycrystalline Si by temperature dependence of Electroluminescence under forward and reverse-biases

Tsujii, Shinichiro, Sugimura, Emi, Hirata, Kenji, Saito, Takashi, Tani, Ayumi, Hatayama, Tomoaki, Yano, Hiroshi, Fuyuki, Takashi

Year:

2010

Language:

english

File:

PDF, 823 KB

english, 2010

22

Epitaxial p-type SiC as a self-driven photocathode for water splitting

Kato, Masashi, Yasuda, Tomonari, Miyake, Keiko, Ichimura, Masaya, Hatayama, Tomoaki

Journal:

International Journal of Hydrogen Energy

Year:

2014

Language:

english

File:

PDF, 781 KB

english, 2014

23

Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing for High-Performance Thin-Film Transistors

Sugawara, Yuta, Uraoka, Yukiharu, Yano, Hiroshi, Hatayama, Tomoaki, Fuyuki, Takashi, Mimura, Akio

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 314 KB

english, 2007

24

Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation

Yoshihara, Kazuki, Kato, Masashi, Ichimura, Masaya, Hatayama, Tomoaki, Ohshima, Takeshi

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 355 KB

english, 2013

25

Photoluminescence on Li-Codoped ZnS:Tm Phosphor

Hatayama, Tomoaki, Fukumoto, Shigeru, Ibuki, Sumiaki

Journal:

Japanese Journal of Applied Physics

Year:

1992

File:

PDF, 325 KB

1992

26

Removal of near-interface traps at SiO[sub 2]/4H–SiC (0001) interfaces by phosphorus incorporation

Okamoto, Dai, Yano, Hiroshi, Hatayama, Tomoaki, Fuyuki, Takashi

Journal:

Applied Physics Letters

Year:

2010

Language:

english

File:

PDF, 376 KB

english, 2010

27

Time-Resolved Luminescence from (La, Ce)PO 4 :Tb Phosphors

Ibuki, Sumiaki, Noguchi, Toru, Hatayama, Tomoaki, Fukumoto, Shigeru

Journal:

Japanese Journal of Applied Physics

Year:

1991

File:

PDF, 230 KB

1991

28

Anomalously anisotropic channel mobility on trench sidewalls in 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors fabricated on 8° off substrates

Yano, Hiroshi, Nakao, Hiroshi, Mikami, Hidenori, Hatayama, Tomoaki, Uraoka, Yukiharu, Fuyuki, Takashi

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 351 KB

english, 2007

29

Initial stage for heteroepitaxy of 3C–SiC on the Si(001) surface in dimethylgermane source molecular beam epitaxy

Hatayama, Tomoaki, Tanaka, Norihiro, Fuyuki, Takashi, Matsunami, Hiroyuki

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 977 KB

english, 1997

30

SiC photoelectrodes for a self-driven water-splitting cell

Yasuda, Tomonari, Kato, Masashi, Ichimura, Masaya, Hatayama, Tomoaki

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 916 KB

english, 2012

31

Comprehensive Study on Reliability of Low-Temperature Poly-Si Thin-Film Transistors under Dynamic Complimentary Metal-Oxide Semiconductor Operations

Uraoka, Yukiharu, Yano, Hiroshi, Hatayama, Tomoaki, Fuyuki, Takashi

Journal:

Japanese Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 213 KB

english, 2002

32

Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides

Yano, Hiroshi, Kanafuji, Natsuko, Osawa, Ai, Hatayama, Tomoaki, Fuyuki, Takashi

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.57 MB

english, 2015

33

Observation of deep levels and their hole capture behavior in p-type 4H-SiC epilayers with and without electron irradiation

Kato, Masashi, Yoshihara, Kazuki, Ichimura, Masaya, Hatayama, Tomoaki, Ohshima, Takeshi

Journal:

Japanese Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 2.07 MB

english, 2014

34

Impact of Carrier Lifetime on Efficiency of Photolytic Hydrogen Generation by p-Type SiC

Miyake, Keiko, Yasuda, Tomonari, Kato, Masashi, Ichimura, Masaya, Hatayama, Tomoaki, Ohshima, Takeshi

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 441 KB

english, 2014

35

Thermal Analysis of Degradation in Ga 2 O 3 –In 2 O 3 –ZnO Thin-Film Transistors

Fujii, Mami, Yano, Hiroshi, Hatayama, Tomoaki, Uraoka, Yukiharu, Fuyuki, Takashi, Jung, Ji Sim, Kwon, Jang Yeon

Journal:

Japanese Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 399 KB

english, 2008

36

Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System

Hatayama, Tomoaki, Takenami, S., Yano, Hiroshi, Uraoka, Yukiharu, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 444 KB

english, 2007

37

Influence of H2 Pre-Treatment on Ni/4H-SiC Schottky Diode Properties

Yamamoto, Y., Hatayama, Tomoaki, Yano, Hiroshi, Uraoka, Yukiharu, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 222 KB

english, 2004

38

Surface Treatments of 4H-SiC Evaluated by Contact Angle Measurement

Hatayama, Tomoaki, Suzuki, Hiroyuki, Koketsu, Hidenori, Yano, Hiroshi, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 401 KB

english, 2011

39

Photoluminescence of 8H-SiC

Henry, Anne, Ivanov, Ivan G., Janzén, Erik, Hatayama, Tomoaki, Yano, Hiroshi, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 882 KB

english, 2013

40

Radical Nitridation of Ultra-Thin SiO2/SiC Structure

Yano, Hiroshi, Furumoto, Y., Niwa, T., Hatayama, Tomoaki, Uraoka, Yukiharu, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 207 KB

english, 2004

41

Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide

Okamoto, Dai, Yano, Hiroshi, Hatayama, Tomoaki, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 331 KB

english, 2012

42

Increased Channel Mobility in 4H-SiC UMOSFETs Using On-Axis Substrates

Yano, Hiroshi, Nakao, H., Hatayama, Tomoaki, Uraoka, Yukiharu, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 350 KB

english, 2007

43

Effects of Nitrogen Radical Irradiation on Performance of SiC MOSFETs

Yano, Hiroshi, Maeyama, Yusuke, Furumoto, Y., Hatayama, Tomoaki, Uraoka, Yukiharu, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2003

Language:

english

File:

PDF, 222 KB

english, 2003

44

High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH3SiH3 and C3H8 Sources

Hatayama, Tomoaki, Yano, Hiroshi, Uraoka, Yukiharu, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 314 KB

english, 2006

45

Hexagonality and Stacking Sequence Dependence of Etching Properties in Cl2-O2-SiC System

Hatayama, Tomoaki, Koketsu, Hidenori, Yano, Hiroshi, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 445 KB

english, 2010

46

Crystallographic Structure of 8H- and 10H-SiC Analyzed by Raman Spectroscopy and Diffraction Methods

Hatayama, Tomoaki, Hori, Ryota, Yano, Hiroshi, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 2.15 MB

english, 2014

47

Control of Inclined Sidewall Angles of 4H-SiC Mesa and Trench Structures

Koketsu, Hidenori, Hatayama, Tomoaki, Amishima, Kento, Yano, Hiroshi, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.57 MB

english, 2011

48

Instability of 4H-SiC MOSFET Characteristics due to Interface Traps with Long Time Constants

Yano, Hiroshi, Oshiro, Yuki, Okamoto, Dai, Hatayama, Tomoaki, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 328 KB

english, 2011

49

Improved MOS Interface Properties of C-Face 4H-SiC by POCl3 Annealing

Kotake, Shinya, Yano, Hiroshi, Okamoto, Dai, Hatayama, Tomoaki, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 434 KB

english, 2011

50

Modification of SiO2/4H-SiC Interface Properties by High-Pressure H2O Vapor Annealing

Takeda, D., Yano, Hiroshi, Hatayama, Tomoaki, Uraoka, Yukiharu, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 314 KB

english, 2007

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